blog navigation

blog posts

  • Chemical etching method helps transistors stand tall

    Illinois researchers developed a method to etch tall, thin transistors for high performance with less error. Pictured, from left: professor Ilesanmi Adesida, graduate student Yi Song and professor Xiuling Li.

    Illinois researchers developed a method to etch tall, thin transistors for high performance with less error. Pictured, from left: professor Ilesanmi Adesida, graduate student Yi Song and professor Xiuling Li.

    Photo by L. Brian Stauffer

    Images

blog posts

  • Editor’s notes: To reach Xiuling Li, call 217-265-6354; email xiuling@illinois.edu.

    The paper “Ultra-high Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method” is available online.