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  • Search for new semiconductors heats up with gallium oxide

    An artist rendering of the MacEtch-produced fin array structures in a beta-gallium oxide semiconductor substrate from professor Xiuling Li’s latest project.

    An artist rendering of the MacEtch-produced fin array structures in a beta-gallium oxide semiconductor substrate from professor Xiuling Li’s latest project.

    Image courtesy ACS Nano

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  • To reach Xiuling Li, call 217-265-6354; email xiuling@illinois.edu

    The paper “High aspect ratio beta-allium oxide fin arrays with low-interface charge density by inverse metal-assisted chemical etching” is available online and from the U. of I. News Bureau. DOI: 10.1021/acsnano.9b01709