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  • New method monitors semiconductor etching as it happens – with light

    A three-dimensional image of an etched gallium-arsenide semiconductor, taken during etching with a new microscopy technique that monitors the etching process on the nanometer scale. The height difference between the orange and purple regions is about 250 nanometers.

    A three-dimensional image of an etched gallium-arsenide semiconductor, taken during etching with a new microscopy technique that monitors the etching process on the nanometer scale. The height difference between the orange and purple regions is about 250 nanometers.

    Photo by Chris Edwards, Amir Arbabi, Gabriel Popescu and Lynford Goddard

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  • Editor's note: To contact To reach Lynford Goddard, call 217-244-0799; emaillgoddard@illinois.edu.
    To reach Gabriel Popescu, 217-333-4840; gpopescu@illinois.edu.
                             
     The paper, “Optically Monitoring and Controlling Nanoscale Topography During Semiconductor Etching,” is available online.